| PART |
Description |
Maker |
| 1SV322 |
Diode Silicon Epitaxial Planar Type TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| U20DL2C53A |
High Efficiency Diode Stack (HED) Silicon Epitaxial Type Switching Mode Power Supply Application Converter&Chopper Application
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
| MA2Z784 |
Silicon epitaxial planar type 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| MA2C179 MA178 MA179 MA2C178 |
Silicon epitaxial planar type 0.2 A, 80 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| KDS120 KDS12008 |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
| KTX301U |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| KDV142EL07 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
